![]() |
Idrees Al-KofahiAssociate Professor Email: This email address is being protected from spambots. You need JavaScript enabled to view it. Phone: +962 2 7211111 ext. 4306 Office:_
|
Education:
- Ph.D. in Microelectronics Engineering from Liverpool John Moores University, 1997
- M.S. in Microelectronics Engineering from Liverpool John Moores University, 1992
- B.S. in Electrical Engineering from Yarmouk University, 1986
Selected Publications:
- 1. Idrees S. Al-Kofahi, Zaid Albataineh, and Ahmad Dagamseh, “A Two-Stage Power Amplifier Design for Ultra-Wideband Applications,” accepted for publication at International Journal of Electrical and Computer Engineering.
- 2. Idrees S. Al-Kofahi, Zaid Albataineh, Mamoun Tantawi and Ahmad Dagamseh, “The narrowband tunable Radio Frequency (RF) power amplifier with High-Efficiency at 2.4 GHz Frequency,” International Journal of Emerging Trends in Engineering Research, Vol. 8. No. 3, pp.763-768, 2020
- 3. A. Ababneh , Z. Albataineh , A. M. K. Dagamseh , I.S.Al-kofahi , B. Schäfer , T. Zengerle,K. Bauer and H. Seidel, “Optical characterization of sputtered aluminum nitride thin films – correlating refractive index with degree of c-axis orientation,” Thin Solid Films, Vol. 693, 2020, 137701
- 4. Zaid Albataineha, Yazan Hamadeh, Jafar Moheidat, Ahmad Dagamseh, Idrees Al-Kofahi, Mohammed Alsumady, “A High-Gain Low Noise Amplifier for RFID Front-Ends Reader,” Jordan Journal of Electrical Engineering, Vol. 3, No. 1, pp. 65-74, 2017
- 5. Suliman M. Abu–Gazleh, Ali A. Eyadeh, Idrees S. Al-Kofahi and Qusai A. Quran, “Theoretical And Experimental Investigation Of Fiber Loss And Dispersion Effects In Optical Networks,” Journal of Electron Devices, Vol. 18, pp. 1524-1530, 2013
- 6. Idrees S. AL-Kofahi, “Investigating Current Density Dependence Of Oxide Trap Charging In NMOSFETs During Substrate Electrons Injection: A Genetic Algorithm Approach,” Journal of Electron Devices, Vol. 17, pp. 1433-1438, 2013
- 7. A. N. AL-Omari, I. AL-Kofahi and K. L. Lear,” Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers,” Semiconductor Science and Technology, 24, 095024 (8pp), 2009